• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Aspects of the present invention relate to a voltage controlled magnetic anisotropy switching device (VCMA) using an external ferromagnetic bias film. Certain aspects of the present invention provide a magnetoresistive random access memory (MRAM) device. The MRAM device generally comprises a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, the MTJ stack comprising a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer. having a non-fixed magnetization, and a magnet disposed adjacent to the second ferromagnetic layer.
    公开号:FR3037185A1
    申请号:FR1654982
    申请日:2016-06-01
    公开日:2016-12-09
    发明作者:Jordan A Katine
    申请人:HGST Netherlands BV；
    IPC主号:
    专利说明:

    [0001] BACKGROUND OF THE INVENTION [0001] Certain aspects of the present invention generally relate to data storage systems, and more particularly, to a data storage device. Voltage Controlled Magnetic Anisotropy (VCMA) switching using an external ferromagnetic bias film. Description of the Prior Art [0002] Modern electronic devices increasingly include significant amounts of semiconductor memory. The electronics industry is constantly looking for increasingly dense devices to reduce energy consumption. Magnetic memory devices, by their nature, have nonvolatility characteristics, and are gaining more and more attention as a type of next-generation memory. The highest storage bit densities in the magnetic media used in the hard drives have reduced the size (volume) of the magnetic bits. Magnetic random access memory (MRAM) provides reduced access time, infinite read / write endurance, radiation hardness, and high storage density. Unlike conventional RAM chip technologies, MRAM data is not stored as an electrical charge, but instead is stored by magnetic polarization of storage elements. MRAM cells having magnetic tunnel junction (MTJ) memory elements may be designed for either planar or perpendicular magnetization of the MTJ layer structure with respect to the film surface. The elements are formed from two magnetically polarized plates, each of which can maintain a magnetic polarization field, separated by a thin insulating layer, which together form an MTJ stack. Fig. 1 is a diagram illustrating an exemplary MTJ 100 stack according to some aspects of the present invention. As illustrated in FIG. 1, one of the two plates is a permanent magnet 102 (i.e., it has a fixed magnetization) set to a particular polarity; the polarization of the other plate 106 will vary (i.e. it will have free magnetization) so that it adapts to that of a sufficiently intense external field. Therefore, the cells have two stable states that allow the cells to act as nonvolatile memory elements. [0004] A memory device can be constructed from a cell grid of this type. The MRAM cells of a matrix-on-chip are connected by lines of words and metal bits. Each memory cell is connected to a word line and a bit line. Word lines connect rows of cells, and bit lines connect cell columns. Generally, complementary metal-oxide semiconductor (CMOS) structures include a selection transistor that is electrically connected to the MTJ stack via the upper or lower metal contacts. The flow direction of the current is established between upper or lower metal electrodes. The reading of the polarization state of an MRAM cell is achieved by measuring the electrical resistance of the MTJ of the cell. A particular cell is usually selected by supplying an associated transistor that switches current from a supply line through the MTJ layer to a ground. Due to the tunneling magnetoresistance effect, in which a tunneling effect of electrons occurs through the tunnel barrier layer 104, the electrical resistance of the cell varies due to the relative orientation of the polarizations in the channels. two magnetic layers of the MTJ. By measuring the resulting current, one can determine the resistance inside any particular cell, and from this, the polarity of the free (free) writable layer determined. If the two layers have the same polarization, this is considered to represent a state "0", the resistance being "low", whereas if the two layers are of opposite polarization, the resistance will be higher, representing a state " 1 ". The data is written in the cells by various techniques. [0006] In conventional MRAM, an external magnetic field is produced by a current flowing in a conductor near the cell, which is sufficiently intense to align the free layer. Spin Transfer Torque MRAM (STT) uses spin-aligned ("polarized") electrons to directly couple the free-layer domains. These polarized electrons penetrating the free layer exert sufficient torque to realign (for example, invert) the magnetization of the free layer. [0007] Magnetoresistive RAM (MeRAM) uses the tunnel magnetoresistance effect (TMR) for reading in a two-terminal memory element, in a manner similar to other types of MRAMs. However, the write of information is done by VCMA at the interface between the tunnel barrier and the free layer, unlike the current controlled mechanisms (for example the STT or the spin-orbit pair, SOT). In VCMA devices, the magnetic properties are controlled by the application of an electric field. VCMA devices are based on switching induced by an electric field of nano-magnets. MeRAM devices offer the potential to dramatically reduce energy dissipation. Due to the elimination of the need for currents for the operation of the device, the ohmic dissipation is substantially reduced, which leads to a very low dynamic energy dissipation (switching). In addition to reduced power dissipation, the use of electric fields for writing in the MeRAM offers an advantage in terms of improving the bit density. In particular, the magnetoelectric writing does not impose a size limit related to the current attack on the access devices (for example the transistors) when they are integrated in a circuit, thereby allowing an area of total cell much lower. At the same time, MeRAM basically retains all the critical advantages of STTMRAM, namely high endurance, high speed, radiation hardness, and the possibility of nonvolatile operation. Therefore, it is necessary to have magnetic memory devices with high density and high energy efficiency. SUMMARY OF THE INVENTION [0009] The systems, methods and devices of the invention each have several aspects, none of which alone is responsible for its desirable attributes. Without limiting the scope of the present invention as expressed by the following claims, certain features will now be described briefly. Having reviewed this presentation, and in particular after reading the section entitled "Detailed Description", it will be understood how the features of the present invention offer advantages that include improving communications between access points and stations in a network. wireless network. Certain aspects of the present invention generally relate to data storage systems, and more particularly to a VCMA switching device using an external ferromagnetic bias film.
    [0002] In one aspect, there is provided an MRAM device. The MRAM device 5 generally comprises a substrate, at least one MTJ stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having a magnetization. non-fixed, and a magnet disposed adjacent to the second ferromagnetic layer. In another aspect, there is provided a method of manufacturing an MRAM device. The method generally comprises forming at least one MTJ stack on a substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having fixed magnetization and a second ferromagnetic layer having non-fixed magnetization. and disposing a magnet adjacent the second ferromagnetic layer. In yet another aspect, there is provided an MRAM device. The MRAM device generally comprises a substrate, at least one MTJ stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having a magnetization. non-fixed, a passivation layer formed on the substrate, wherein the passivation layer fills the gap between the MTJs, and a magnet disposed in the passivation layer adjacent to the second ferromagnetic layer, wherein the magnet comprises a ferromagnetic bias layer disposed horizontally parallel to the substrate, and aligned with the second ferromagnetic layer, and wherein the magnetization of the second layer describes a ferromagnetic precession around a bias field from the magnet when a voltage of polarization is applied to the MTJ stack so that the pol Magnetic arity of the MTJ stack is reversed when an electric field is applied to the MTJ stack. [0014] For the implementation of the foregoing and related objects, said one or more aspects comprise the features described hereinafter in detail and more particularly underlined in the claims. The following description and the accompanying drawings detail some illustrative aspects of said one or more aspects. These features, however, are indicative of only a few of the various ways in which the principles of various aspects of the invention can be used, and the present description should be considered to cover all these aspects and their equivalents.
    [0003] BRIEF DESCRIPTION OF THE DRAWINGS [0015] In order that the manner in which the above-mentioned features of the present invention can be understood in detail, a more specific description, briefly summarized above, may be obtained with reference to aspects of the present invention. invention, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings 10 illustrate only some typical aspects of the present invention and therefore should not be construed as limiting its scope, other equally effective aspects within the scope of the present invention. Figure 1 is a diagram illustrating an example MTJ stack, according to some aspects of the present invention. FIG. 2 is a diagram illustrating an example of an MTJ stack with a magnetic polarization layer in the stack. Figure 3 illustrates the application of a magnetic field for adjusting an energy barrier, according to some aspects of the present invention. [0019] FIG. 4 illustrates the switching of the magnetic polarity by applying a voltage, according to some aspects of the present invention. FIG. 5 is a graph illustrating an example of VCAM-driven writing with a TMR reading for a perpendicular MTJ device using a polarization field in the stack. FIG. 6 is a block diagram illustrating an example of MRAM manufacturing operations, in accordance with some aspects of the present invention. FIG. 7 is a diagram illustrating an exemplary MRAM device comprising an MTJ stack with an external magnetic bias layer, according to some aspects of the present invention. For ease of understanding, like reference numerals have been used, where possible, to designate like elements that are common to the figures. It can be considered that the elements described with regard to one aspect can be advantageously used for other aspects, without the need to specifically mention them.
    [0004] DETAILED DESCRIPTION [0024] Various aspects of the invention are described in more detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to any specific structure or function presented throughout this specification. These aspects are indeed presented in such a way that the present description is exhaustive and complete, and that it best transmits the field of application of the invention to those skilled in the art. Based on the teachings of this document, those skilled in the art will understand that the scope of the invention encompasses any aspect of the invention described herein whether it is carried out independently or in combination with any other aspect of the invention. For example, a device may be implemented or a method may be practiced using any number of the aspects presented herein. In addition, the scope of the invention is considered to cover such an apparatus or process practiced using another structure or functionality or a more or different structure and functionality. various aspects of the invention presented here. It should be understood that any aspect of the invention described herein may be implemented by one or more elements of a claim. The term "given by way of example" is used herein to mean "serving as an example, as an embodiment or as an illustration". All aspects described herein as "exemplary" need not be interpreted as being preferred or advantageous over other aspects. Certain aspects of the present invention generally relate to a VCMA switching device using an external ferromagnetic bias film. By way of example, as will be discussed in more detail below, at least one MTJ stack may be formed on a substrate. The MTJ stack / stack may comprise a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having a non-fixed magnetization. An external magnet (e.g., a ferromagnetic polarization layer) may be disposed adjacent to the second ferromagnetic layer. In the following description of certain aspects of the present description, reference is made to the accompanying drawings which form part thereof and which are presented by way of illustration of the particular embodiments according to which the invention may be in practice. It should be noted that the figures presented here are not shown in scale and do not indicate actual or relative sizes. The possible hatches appearing in the figures make it possible to distinguish the layers and do not represent the type of material used. A plurality of MRAM cell arrays are generally manufactured simultaneously on a single wafer. The figures and description presented herein refer to only a few of the plurality of cells that will typically be manufactured simultaneously on a single wafer. EXAMPLE OF VCMA SWITCHING DEVICE [0028] In ferromagnetic metal films such as those generally used in MTJ devices, the electric fields are obscured by the conductivity of the material and therefore only penetrate a few Angstroms into the surface of the material. movie. Therefore, the intensity of the electric field near the surface is in principle a limitation for the electric field control of the magnetic properties. However, by using ultra-thin ferromagnetic films (e.g. <2 nm), the magnetic properties can be sensitive to, or even dominated by, interfacing effects, thereby providing a mechanism for coupling the electric field. applied to the magnetic anisotropy of the material. Thus, the manipulation of metal ferro-magnets via the voltage-controlled interfacial magnetic perpendicular anisotropy (PMA) can be used to provide magnetic field-controlled magnetic devices. The VCMA effect can be explained as an occupation variation induced by an electric field of atomic orbitals at the interface, which, in association with the spin-orbit interaction, leads to a variation of the anisotropy. FIG. 2 is a diagram illustrating an example of MTJ stack 200 having a magnetic polarization layer in the stack. As illustrated in FIG. 2, the MTJ stack 200 comprises a fixed layer 202, a tunnel barrier layer 204, a free layer 206, a passivation layer 208, and a magnetic polarization layer in the stack 210. An example of an MTJ stack may include magnetic layers of CoFeB 202 and 206 and MgO as tunnel barrier layer 204. CoFeB-MgO MTJs (or other similar type MTJs) exhibit controlled magnetic anisotropy in tension (VCMA) in which an electric field varies the electron density at the CeFeB / Mg0 interface and affects the perpendicular anisotropy. For example, a decrease in the density of electrons at the interface increases the perpendicular anisotropy. Since this magnetoelectric coupling is not stress-related, it is not subject to endurance limitation, thus making it compatible with logic and memory applications. An external magnetic field switches the orientation of the energy barrier, while the controlled voltage anisotropy reduces or increases the energy barrier, according to the polarity. Figure 3 illustrates the application of a magnetic field to adjust an energy barrier, according to some aspects of the present invention. The adjustment of the energy barrier may allow deterministic switching when a voltage (pulse) is applied, as illustrated in FIG. 4. By way of example, as illustrated in FIG. 4, an MTJ may have a free-layer magnetization aligned with an initial magnetization Heff. In this example, Heff points upward and is dominated by interfacial anisotropy out of the plane. The application of a voltage leads to an electric field across the MgO barrier and reduces interfacial anisotropy. This reconfiguration of the magnetic anisotropy of the free layer via the VCMA effect allows switching using electric fields; in other words, the reduction of coercivity due to the VCMA effect is exploited to switch the magnetization of the free layer of our VMTJs without the influence of spin polarized currents. As illustrated in FIG. 4, when a voltage pulse Vp is applied, the effective field Heff influencing the free layer flips in the plane due to the fact that the interfacial anisotropy field is reduced and Heff is now dominated by the polarization field from the layer in the stack 210. The magnetization of the free layer will describe a precession around Heff until it finally aligns with Heff. The damping is sufficiently low in the system 30 that many oscillations occur before the precession stops. The precession can be interrupted by deactivating Vp, which can lead to a state of final magnetization which has a polarity opposite to the direction of initial magnetization. These electric field-driven MTJs may be compatible with the integration of complementary metal-oxide semiconductors (CMOS). The reading can be performed via the TMR effect and electric writing can be performed via electric fields by means of the VCMA. The writing may for example be a resonance (precession) less than 1 ns. The bits may be perpendicular for reasons of scaling and density. FIG. 5 is a graph 500 showing VCMA-driven writing with a TMR reading for a 80 nm x 80 nm perpendicular MTJ device using a polarization field in the stack. As illustrated in FIG. 5, 100% switching can be performed (for example in a time window of about 700 ps ± 250 ps). In this example, the switching energy can be about 10 fJ / bit with a write time <1 ns. Since this VCMA precession is a switch and not a deterministic operation (i.e. a switch occurs whenever a VCMA pulse is applied), a read can be made before and / or after switching 15 to determine the polarity of the bits, and whether the switching pulse should be applied. [0034] Traditionally, the magnetic field is produced by a magnetic polarization layer in the stack, such as the magnetic polarization layer in the stack 210 illustrated in FIG. 2. EXAMPLE OF A VCMA SWITCHING DEVICE USING A POLARIZATION LAYER EXTERNAL FERROMAGNETIC [0035] According to certain aspects of the present invention, a magnetic tunnel junction (MTJ) device having an external magnet (for example, as opposed to the case of a magnet in the stack) is described (for example the layer polarization). The use of an external (for example permanent) magnet may allow for simpler stacking. FIG. 6 is a call flow illustrating an example of the MRAM manufacturing operations 600 in accordance with some aspects of the present invention. For example, operations 600 may be used to fabricate the MRAM device 700 shown in FIG. 7. In 602, at least one MTJ stack (for example, such as the MTJ stack 704) may be formed. on a substrate (e.g., substrate 702), MTJ stack 3037185 comprising a tunnel barrier layer (e.g., tunnel barrier layer 708 which may be an MgO layer) between a first ferromagnetic layer (e.g. a CoFeB layer) having a fixed magnetization (e.g., the fixed layer 706) and a second ferromagnetic layer (e.g., a CoFeB layer) having non-fixed magnetization (e.g., the free layer 710). In 604, a magnet (e.g., the outer magnet 712) may be disposed (e.g., formed) adjacent to the second ferromagnetic layer. In some aspects, the magnet may be disposed in a passivation layer deposited on the substrate to prevent a short circuit (e.g., after machining the device). In some aspects, the magnet may be a ferromagnetic bias layer (eg, a hard material such as a CoPt layer or a soft material such as a NiFe layer blocked by an antiferromagnet) formed on the substrate ( for example, a wafer). As illustrated in FIG. 7, the outer magnet 712 may be formed horizontally parallel to the substrate 702 and be aligned with the free layer 710. In 606, a bias voltage is applied to the MTJ stack so as to to reduce the perpendicular anisotropy at the free-layer / barrier interface (VCMA effect), causing the magnetization of the free layer to describe a precession around the effective field-now dominated by the field created by the bias magnet. The pulse duration can be optimized to interrupt the precession to reverse the magnetic polarity of the free layer. In some aspects, the thickness of the disposed magnet and / or the distance of the magnet from the second ferromagnetic layer may be selected during manufacture of the device such that a desired magnetic field (e.g. optimal) is exerted on the stack MTJ by the magnet. In some aspects, the outer magnet may be disposed by Ion Beam Deposition (IBD), electrodeposition, sputtering, or other deposition technique. FIG. 7 is a diagram illustrating the example of MRAM device 700 comprising an MTJ stack 704 with an external magnet 712, according to certain aspects of the present invention. In some aspects, when an electric field (e.g., a VCMA pulse) is applied to the MTJ stack, the magnetization of the free layer can describe a precession around the permanent bias field (produced by the external magnet) . Optimization of the torque and thickness of the external magnet can be used to produce a desirable precession field. By way of example, the use of a more intense magnetic field makes it possible to ensure a shorter precession time. In some aspects, the use of an external magnetic field can lead to an improvement in the control of the magnetic field, the ability to use more intense magnetic fields, the ability to etch the stack. MTJ more easily, and simpler magnetic configurations. In addition, because the layers may be thinner and easier to etch through, a narrower final step may be used. In addition, magnets in the stack may require a high field annealing field in the plane in order to fix their direction, which may be unfavorable for the properties of the free layer and for the perpendicular anisotropy. In addition, it will be appreciated that while a permanent magnet having a high coercivity (hard magnet) has been illustrated for the outer magnet 712, a low coercivity (soft magnet) coupled to an antiferromagnetic polarization layer could also be used. The methods described herein include one or more steps or actions for carrying out the described method. The steps and / or actions of the process can be interchanged with each other without departing from the scope of the claims. In other words, unless a specific order of steps or actions is specified, the order and / or use of specific steps and / or actions can be modified without going out. of the scope of the claims. [0044] As used herein, an expression referring to "at least one" of a list of elements refers to any combination of these elements, including the individual elements. By way of example, "at least one of: a, b, c" is considered to cover a, b, c, ab, ac, bc, and abc, as well as any combination with multiple identical elements (eg, aa, aaa, aab, aac, abb, acc, bb, bbb, bbc, cc, and ccc or any other way of ordering a, b, and c). The various operations of the methods described above can be performed by any appropriate means for performing the corresponding functions. These means may include various hardware and / or software components. [0046] It should be noted that the claims are not limited to the particular configuration and particular components illustrated above. Various modifications, modifications and variations can be applied to the arrangement, operation and details of the methods and apparatus described above without departing from the scope of the claims.
    权利要求:
    Claims (19)
    [0001]
    REVENDICATIONS1. A magnetoresistive random access memory (MRAM) device, comprising: a substrate; at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having a non-fixed magnetization; and a magnet disposed adjacent to the second ferromagnetic layer. 10
    [0002]
    The MRAM device according to claim 1, wherein the magnet comprises a ferromagnetic bias layer formed horizontally parallel to the substrate and aligned with the second ferromagnetic layer.
    [0003]
    3. The MRAM device according to claim 1, wherein the magnet comprises a hard ferromagnetic layer or a soft ferromagnetic layer blocked by an antiferromagnet.
    [0004]
    The MRAM device according to claim 3, wherein the hard ferromagnetic layer comprises CoPt and the soft ferromagnetic layer comprises NiFe. 20
    [0005]
    The MRAM device according to claim 1, wherein the MRAM device further comprises a passivation layer formed on the substrate, and wherein the magnet is disposed in the passivation layer. 25
    [0006]
    The MRAM device of claim 1, wherein the first ferromagnetic layer and the second ferromagnetic layer comprise CoFeB layers.
    [0007]
    The MRAM device of claim 1, wherein the tunnel barrier layer comprises an MgO layer. 30
    [0008]
    A method of manufacturing a magnetoresistive random access memory (MRAM) device, comprising: forming at least one magnetic tunnel junction (MTJ) stack on a substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having a non-fixed magnetization; and disposing a magnet adjacent to the second ferromagnetic layer.
    [0009]
    The method of claim 8, wherein the magnet comprises a ferromagnetic bias layer formed horizontally parallel to the substrate and aligned with the second ferromagnetic layer.
    [0010]
    The method of claim 8, wherein the magnet comprises a hard ferromagnetic layer or a soft ferromagnetic layer blocked by an antiferromagnet.
    [0011]
    The method of claim 10, wherein the hard ferromagnetic layer comprises CoPt and the soft ferromagnetic layer comprises NiFe.
    [0012]
    The method of claim 8, further comprising: forming a passivation layer on the substrate, wherein the magnet is disposed in the passivation layer.
    [0013]
    The method of claim 8, wherein the first ferromagnetic layer and the second ferromagnetic layer comprise CoFeB layers.
    [0014]
    The method of claim 8, wherein the tunnel barrier layer comprises an MgO layer. 25
    [0015]
    The method of claim 8, further comprising using a voltage controlled magnetic anisotropy (VCMA) effect such that the magnetization of the second ferromagnetic layer describes a precession around a bias field from the magnet for reversing a magnetic polarity of the second ferromagnetic layer.
    [0016]
    The method of claim 15, wherein the magnet adjacent to the second ferromagnetic layer is a permanent magnet. 3037185 15
    [0017]
    A magnetoresistive random access memory (MRAM) device, comprising: a substrate; at least one magnetic tunnel junction stack (MTJ) disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having a non-fixed magnetization; a passivation layer formed on the substrate, wherein the passivation layer fills the gap between the MTJs; and a magnet disposed in the passivation layer adjacent to the second ferromagnetic layer, wherein the magnet comprises a ferromagnetic bias layer disposed horizontally parallel to the substrate and aligned with the second ferromagnetic layer, and wherein the magnetization of the ferromagnetic layer second ferromagnetic layer describes a precession around a bias field from the magnet when a bias voltage is applied to the stack. MTJ to reverse a magnetic polarity of the MTJ stack when an electric field is applied to the MTJ stack.
    [0018]
    The MRAM device according to claim 17, wherein the magnet comprises a hard ferromagnetic layer or a soft ferromagnetic layer blocked by an antiferromagnet.
    [0019]
    The MRAM device according to claim 17, wherein the magnet is a permanent magnet.
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    同族专利:
    公开号 | 公开日
    FR3037185B1|2019-10-25|
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    US20160358973A1|2016-12-08|
    TW201705568A|2017-02-01|
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    KR20160142255A|2016-12-12|
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    CN106374035A|2017-02-01|
    TWI602331B|2017-10-11|
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    优先权:
    申请号 | 申请日 | 专利标题
    US14728788|2015-06-02|
    US14/728,788|US9620562B2|2015-06-02|2015-06-02|Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film|
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